BC860C-HXY Transistor Datasheet & Specifications

PNP SOT-23 General Purpose HXY MOSFET
VCEO
45V
Ic Max
100mA
Pd Max
200mW
hFE Gain
800

Quick Reference

The BC860C-HXY is a PNP bipolar transistor in a SOT-23 package by HXY MOSFET. This datasheet provides complete specifications including 45V breakdown voltage and 100mA continuous collector current. Download the BC860C-HXY datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO45VBreakdown voltage
Ic100mACollector current
Pd200mWPower dissipation
DC Current Gain800hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT2907A-7-F PNP SOT-23 60V 600mA 350mW
FMMT560TA PNP SOT-23 500V 150mA 500mW
BC856ALT1G PNP SOT-23 65V 100mA 225mW
MMBTA92 PNP SOT-23 300V 500mA 300mW
ZXTP2025FTA PNP SOT-23 50V 5A 1.2W
2SA812 PNP SOT-23 50V 100mA 200mW
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
LBC856BLT1G PNP SOT-23 65V 100mA 225mW
LBC807-40LT1G PNP SOT-23 45V 500mA 225mW
FMMTA92TA PNP SOT-23 300V 200mA 310mW