BC860B Transistor Datasheet & Specifications

PNP SOT-23 High Power YFW
VCEO
45V
Ic Max
100mA
Pd Max
250W
hFE Gain
475

Quick Reference

The BC860B is a PNP bipolar transistor in a SOT-23 package by YFW. This datasheet provides complete specifications including 45V breakdown voltage and 100mA continuous collector current. Download the BC860B datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerYFWOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO45VBreakdown voltage
Ic100mACollector current
Pd250WPower dissipation
DC Current Gain475hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat75mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current4uALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT2907A-7-F PNP SOT-23 60V 600mA 350mW
FMMT560TA PNP SOT-23 500V 150mA 500mW
BC856ALT1G PNP SOT-23 65V 100mA 225mW
MMBTA92 PNP SOT-23 300V 500mA 300mW
ZXTP2025FTA PNP SOT-23 50V 5A 1.2W
2SA812 PNP SOT-23 50V 100mA 200mW
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
LBC856BLT1G PNP SOT-23 65V 100mA 225mW
LBC807-40LT1G PNP SOT-23 45V 500mA 225mW
FMMTA92TA PNP SOT-23 300V 200mA 310mW