BC858C Transistor Datasheet & Specifications

PNP SOT-23 General Purpose Guangdong Hottech
VCEO
30V
Ic Max
100mA
Pd Max
200mW
hFE Gain
420

Quick Reference

The BC858C is a PNP bipolar transistor in a SOT-23 package by Guangdong Hottech. This datasheet provides complete specifications including 30V breakdown voltage and 100mA continuous collector current. Download the BC858C datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerGuangdong HottechOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO30VBreakdown voltage
Ic100mACollector current
Pd200mWPower dissipation
DC Current Gain420hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT2907A-7-F PNP SOT-23 60V 600mA 350mW
FMMT560TA PNP SOT-23 500V 150mA 500mW
MMBT3906 PNP SOT-23 40V 200mA 300mW
LBSS5240LT1G PNP SOT-23 40V 2A 300mW
BC856ALT1G PNP SOT-23 65V 100mA 225mW
MMBTA92 PNP SOT-23 300V 500mA 300mW
ZXTP2025FTA PNP SOT-23 50V 5A 1.2W
2SA812 PNP SOT-23 50V 100mA 200mW
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
LBC856BLT1G PNP SOT-23 65V 100mA 225mW