BC858AWT1G Transistor Datasheet & Specifications

PNP SC-70(SOT-323) General Purpose onsemi
VCEO
30V
Ic Max
100mA
Pd Max
150mW
hFE Gain
125

Quick Reference

The BC858AWT1G is a PNP bipolar transistor in a SC-70(SOT-323) package by onsemi. This datasheet provides complete specifications including 30V breakdown voltage and 100mA continuous collector current. Download the BC858AWT1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSC-70(SOT-323)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO30VBreakdown voltage
Ic100mACollector current
Pd150mWPower dissipation
DC Current Gain125hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat300mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current4uALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
2SA1577T106R PNP SC-70(SOT-323) 32V 500mA 200mW
2SA1576AT106R PNP SC-70(SOT-323) 50V 150mA 200mW
2SA1577T106Q PNP SC-70(SOT-323) 32V 500mA 200mW
MMBT3906WT1G PNP SC-70(SOT-323) 40V 200mA 150mW
BC858BWT1G PNP SC-70(SOT-323) 30V 100mA 150mW
2SA1576AT106S PNP SC-70(SOT-323) 50V 150mA 200mW
2SA1576AT106Q PNP SC-70(SOT-323) 50V 150mA 200mW
2SAR502U3T106 PNP SC-70(SOT-323) 30V 500mA 200mW