MMBT3906WT1G Transistor Datasheet & Specifications
PNP
SC-70(SOT-323)
General Purpose
onsemi
VCEO
40V
Ic Max
200mA
Pd Max
150mW
hFE Gain
60
Quick Reference
The MMBT3906WT1G is a PNP bipolar transistor in a SC-70(SOT-323) package by onsemi. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the MMBT3906WT1G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SC-70(SOT-323) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 40V | Breakdown voltage |
| Ic | 200mA | Collector current |
| Pd | 150mW | Power dissipation |
| DC Current Gain | 60 | hFE / Beta |
| Frequency | 250MHz | Transition speed (fT) |
| VCEsat | 250mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 50nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |