BC857CQ-7-F Transistor Datasheet & Specifications
PNP
SOT-23-3
General Purpose
DIODES
VCEO
45V
Ic Max
100mA
Pd Max
310mW
hFE Gain
420
Quick Reference
The BC857CQ-7-F is a PNP bipolar transistor in a SOT-23-3 package by DIODES. This datasheet provides complete specifications including 45V breakdown voltage and 100mA continuous collector current. Download the BC857CQ-7-F datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-23-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 45V | Breakdown voltage |
| Ic | 100mA | Collector current |
| Pd | 310mW | Power dissipation |
| DC Current Gain | 420 | hFE / Beta |
| Frequency | 200MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 4uA | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMBT5401 | PNP | SOT-23-3 | 150V | 600mA | 300mW |
| 2SB1691WL-TL-E | PNP | SOT-23-3 | 50V | 1A | 800mW |