MMBT5401 Transistor Datasheet & Specifications
PNP
SOT-23-3
General Purpose
MDD(Microdiode Semiconductor)
VCEO
150V
Ic Max
600mA
Pd Max
300mW
hFE Gain
300
Quick Reference
The MMBT5401 is a PNP bipolar transistor in a SOT-23-3 package by MDD(Microdiode Semiconductor). This datasheet provides complete specifications including 150V breakdown voltage and 600mA continuous collector current. Download the MMBT5401 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | MDD(Microdiode Semiconductor) | Original Manufacturer |
| Package | SOT-23-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 150V | Breakdown voltage |
| Ic | 600mA | Collector current |
| Pd | 300mW | Power dissipation |
| DC Current Gain | 300 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | 500mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |