BC857BS Transistor Datasheet & Specifications

PNP SOT-363 General Purpose YONGYUTAI
VCEO
45V
Ic Max
200mA
Pd Max
300mW
hFE Gain
630

Quick Reference

The BC857BS is a PNP bipolar transistor in a SOT-363 package by YONGYUTAI. This datasheet provides complete specifications including 45V breakdown voltage and 200mA continuous collector current. Download the BC857BS datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerYONGYUTAIOriginal Manufacturer
PackageSOT-363Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO45VBreakdown voltage
Ic200mACollector current
Pd300mWPower dissipation
DC Current Gain630hFE / Beta
Frequency200MHzTransition speed (fT)
VCEsat300mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current15nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMDT5401 PNP SOT-363 150V 200mA 200mW
BCM857BS PNP SOT-363 45V 200mA 300mW
TPMMDT5401 PNP SOT-363 150V 200mA 200mW
TPMMDT2907A PNP SOT-363 60V 600mA 200mW
BC857BS PNP SOT-363 45V 200mA 300mW
MMDT5401DW PNP SOT-363 150V 600mA 300mW
MMDT5401 PNP SOT-363 150V 600mA 300mW
BCM857BS PNP SOT-363 45V 200mA 300mW
MMDT5401 PNP SOT-363 150V 200mA 200mW
BC857BS PNP SOT-363 45V 200mA 300mW