BC857A Transistor Datasheet & Specifications

PNP SOT-23 General Purpose MSKSEMI
VCEO
45V
Ic Max
100mA
Pd Max
200mW
hFE Gain
125

Quick Reference

The BC857A is a PNP bipolar transistor in a SOT-23 package by MSKSEMI. This datasheet provides complete specifications including 45V breakdown voltage and 100mA continuous collector current. Download the BC857A datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMSKSEMIOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO45VBreakdown voltage
Ic100mACollector current
Pd200mWPower dissipation
DC Current Gain125hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT2907A-7-F PNP SOT-23 60V 600mA 350mW
FMMT560TA PNP SOT-23 500V 150mA 500mW
BC856ALT1G PNP SOT-23 65V 100mA 225mW
MMBTA92 PNP SOT-23 300V 500mA 300mW
ZXTP2025FTA PNP SOT-23 50V 5A 1.2W
2SA812 PNP SOT-23 50V 100mA 200mW
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
LBC856BLT1G PNP SOT-23 65V 100mA 225mW
LBC807-40LT1G PNP SOT-23 45V 500mA 225mW
FMMTA92TA PNP SOT-23 300V 200mA 310mW