BC856BW Transistor Datasheet & Specifications

PNP SOT-323 General Purpose YANGJIE
VCEO
65V
Ic Max
100mA
Pd Max
200mW
hFE Gain
220

Quick Reference

The BC856BW is a PNP bipolar transistor in a SOT-323 package by YANGJIE. This datasheet provides complete specifications including 65V breakdown voltage and 100mA continuous collector current. Download the BC856BW datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerYANGJIEOriginal Manufacturer
PackageSOT-323Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO65VBreakdown voltage
Ic100mACollector current
Pd200mWPower dissipation
DC Current Gain220hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat650mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMSTA92-7-F PNP SOT-323 300V 100mA 200mW
BC856AW-7-F PNP SOT-323 65V 100mA 200mW
BC856W,115 PNP SOT-323 65V 100mA 200mW
2SA1587-GR,LF PNP SOT-323 120V 100mA 100mW
BC856BW,115 PNP SOT-323 65V 100mA 200mW
MMST5401(RANGE:100-300) PNP SOT-323 150V 600mA 200mW
MMSTA56-7-F-HXY PNP SOT-323 150V 600mA 200mW
PMSTA56-HXY PNP SOT-323 150V 600mA 200mW
SMMBTA56WT3G-HXY PNP SOT-323 150V 600mA 200mW
NSVMMBT5401WT1G-HXY PNP SOT-323 150V 600mA 200mW