BC856AW-7-F Transistor Datasheet & Specifications

PNP SOT-323 General Purpose DIODES
VCEO
65V
Ic Max
100mA
Pd Max
200mW
hFE Gain
250

Quick Reference

The BC856AW-7-F is a PNP bipolar transistor in a SOT-323 package by DIODES. This datasheet provides complete specifications including 65V breakdown voltage and 100mA continuous collector current. Download the BC856AW-7-F datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-323Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO65VBreakdown voltage
Ic100mACollector current
Pd200mWPower dissipation
DC Current Gain250hFE / Beta
Frequency200MHzTransition speed (fT)
VCEsat75mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current4uALeakage (ICBO)
Temp-65โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMSTA92-7-F PNP SOT-323 300V 100mA 200mW
BC856W,115 PNP SOT-323 65V 100mA 200mW
2SA1587-GR,LF PNP SOT-323 120V 100mA 100mW
BC856BW,115 PNP SOT-323 65V 100mA 200mW
MMST5401(RANGE:100-300) PNP SOT-323 150V 600mA 200mW
MMSTA56-7-F-HXY PNP SOT-323 150V 600mA 200mW
PMSTA56-HXY PNP SOT-323 150V 600mA 200mW
SMMBTA56WT3G-HXY PNP SOT-323 150V 600mA 200mW
NSVMMBT5401WT1G-HXY PNP SOT-323 150V 600mA 200mW
BC806-16WF-HXY PNP SOT-323 150V 600mA 200mW