BC856BW Transistor Datasheet & Specifications

PNP SOT-323 General Purpose DIODES
VCEO
65V
Ic Max
100mA
Pd Max
350mW
hFE Gain
125

Quick Reference

The BC856BW is a PNP bipolar transistor in a SOT-323 package by DIODES. This datasheet provides complete specifications including 65V breakdown voltage and 100mA continuous collector current. Download the BC856BW datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-323Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO65VBreakdown voltage
Ic100mACollector current
Pd350mWPower dissipation
DC Current Gain125hFE / Beta
Frequency200MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMSTA92-7-F PNP SOT-323 300V 100mA 200mW
BC856AW-7-F PNP SOT-323 65V 100mA 200mW
BC856W,115 PNP SOT-323 65V 100mA 200mW
2SA1587-GR,LF PNP SOT-323 120V 100mA 100mW
BC856BW,115 PNP SOT-323 65V 100mA 200mW
MMST5401(RANGE:100-300) PNP SOT-323 150V 600mA 200mW
MMSTA56-7-F-HXY PNP SOT-323 150V 600mA 200mW
PMSTA56-HXY PNP SOT-323 150V 600mA 200mW
SMMBTA56WT3G-HXY PNP SOT-323 150V 600mA 200mW
NSVMMBT5401WT1G-HXY PNP SOT-323 150V 600mA 200mW