BC856BS Transistor Datasheet & Specifications
PNP
SOT-363
General Purpose
FUXINSEMI
VCEO
65V
Ic Max
100mA
Pd Max
200mW
hFE Gain
200
Quick Reference
The BC856BS is a PNP bipolar transistor in a SOT-363 package by FUXINSEMI. This datasheet provides complete specifications including 65V breakdown voltage and 100mA continuous collector current. Download the BC856BS datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | FUXINSEMI | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 65V | Breakdown voltage |
| Ic | 100mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 200 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMDT5401 | PNP | SOT-363 | 150V | 200mA | 200mW |
| TPMMDT5401 | PNP | SOT-363 | 150V | 200mA | 200mW |
| BC856BDW1T1G-HYX | PNP | SOT-363 | 65V | 100mA | 200mW |
| AD-BC856S | PNP | SOT-363 | 65V | 100mA | 0.2mW |
| BC856S(RANGE:110-475) | PNP | SOT-363 | 65V | 100mA | 200mW |
| BC856DW | PNP | SOT-363 | 65V | 100mA | 200mW |
| MMDT5401DW | PNP | SOT-363 | 150V | 600mA | 300mW |
| MMDT5401 | PNP | SOT-363 | 150V | 600mA | 300mW |
| MMDT5401 | PNP | SOT-363 | 150V | 200mA | 200mW |
| MMDT5401 | PNP | SOT-363 | 150V | 200mA | 200mW |