BC856BDW1T1G-HYX Transistor Datasheet & Specifications
PNP
SOT-363
General Purpose
HXY MOSFET
VCEO
65V
Ic Max
100mA
Pd Max
200mW
hFE Gain
-
Quick Reference
The BC856BDW1T1G-HYX is a PNP bipolar transistor in a SOT-363 package by HXY MOSFET. This datasheet provides complete specifications including 65V breakdown voltage and 100mA continuous collector current. Download the BC856BDW1T1G-HYX datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 65V | Breakdown voltage |
| Ic | 100mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | - | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | 300mV@100mA,5mA | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 15nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMDT5401 | PNP | SOT-363 | 150V | 200mA | 200mW |
| TPMMDT5401 | PNP | SOT-363 | 150V | 200mA | 200mW |
| AD-BC856S | PNP | SOT-363 | 65V | 100mA | 0.2mW |
| BC856S(RANGE:110-475) | PNP | SOT-363 | 65V | 100mA | 200mW |
| BC856DW | PNP | SOT-363 | 65V | 100mA | 200mW |
| MMDT5401DW | PNP | SOT-363 | 150V | 600mA | 300mW |
| MMDT5401 | PNP | SOT-363 | 150V | 600mA | 300mW |
| MMDT5401 | PNP | SOT-363 | 150V | 200mA | 200mW |
| BC856BS | PNP | SOT-363 | 65V | 100mA | 200mW |
| MMDT5401 | PNP | SOT-363 | 150V | 200mA | 200mW |