BC847S Transistor Datasheet & Specifications
NPN
SOT-363
General Purpose
HT(Shenzhen Jinyu Semicon)
VCEO
45V
Ic Max
100mA
Pd Max
200mW
hFE Gain
630
Quick Reference
The BC847S is a NPN bipolar transistor in a SOT-363 package by HT(Shenzhen Jinyu Semicon). This datasheet provides complete specifications including 45V breakdown voltage and 100mA continuous collector current. Download the BC847S datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HT(Shenzhen Jinyu Semicon) | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 45V | Breakdown voltage |
| Ic | 100mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 630 | hFE / Beta |
| Frequency | 200MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMDT5551(RANGE:100-300) | NPN | SOT-363 | 160V | 200mA | 200mW |
| BC847BDW1T1G-GK | NPN | SOT-363 | 45V | 100mA | 200mW |
| MMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |
| BC847BDW1T1G-FS | NPN | SOT-363 | 45V | 100mA | 200mW |
| BCM847BS | NPN | SOT-363 | 45V | 100mA | 200mW |
| BC846BS | NPN | SOT-363 | 65V | 100mA | 200mW |
| BC847BSQ | NPN | SOT-363 | 45V | 100mA | 200mW |
| MMDT5551 | NPN | SOT-363 | 160V | 200mA | 200mW |
| TPBC847S | NPN | SOT-363 | 45V | 100mA | 300mW |
| BC847S | NPN | SOT-363 | 45V | 100mA | 200mW |