BC847DW Transistor Datasheet & Specifications

NPN SOT-363 General Purpose CBI
VCEO
45V
Ic Max
100mA
Pd Max
200mW
hFE Gain
800

Quick Reference

The BC847DW is a NPN bipolar transistor in a SOT-363 package by CBI. This datasheet provides complete specifications including 45V breakdown voltage and 100mA continuous collector current. Download the BC847DW datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerCBIOriginal Manufacturer
PackageSOT-363Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO45VBreakdown voltage
Ic100mACollector current
Pd200mWPower dissipation
DC Current Gain800hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat300mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current15nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMDT5551(RANGE:100-300) NPN SOT-363 160V 200mA 200mW
BC847BDW1T1G-GK NPN SOT-363 45V 100mA 200mW
MMDT5551 NPN SOT-363 160V 200mA 200mW
BC847BDW1T1G-FS NPN SOT-363 45V 100mA 200mW
BCM847BS NPN SOT-363 45V 100mA 200mW
BC846BS NPN SOT-363 65V 100mA 200mW
BC847BSQ NPN SOT-363 45V 100mA 200mW
MMDT5551 NPN SOT-363 160V 200mA 200mW
TPBC847S NPN SOT-363 45V 100mA 300mW
BC847S NPN SOT-363 45V 100mA 200mW