BC33740TA Transistor Datasheet & Specifications
NPN
TO-92-3L
General Purpose
onsemi
VCEO
50V
Ic Max
800mA
Pd Max
625mW
hFE Gain
100
Quick Reference
The BC33740TA is a NPN bipolar transistor in a TO-92-3L package by onsemi. This datasheet provides complete specifications including 50V breakdown voltage and 800mA continuous collector current. Download the BC33740TA datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-92-3L | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 50V | Breakdown voltage |
| Ic | 800mA | Collector current |
| Pd | 625mW | Power dissipation |
| DC Current Gain | 100 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| BC63916-D74Z | NPN | TO-92-3L | 80V | 1A | 830mW |
| BC33725BU | NPN | TO-92-3L | 50V | 800mA | 625mW |
| MPSA29-D26Z | NPN | TO-92-3L | 100V | 800mA | 625mW |