MPSA29-D26Z Transistor Datasheet & Specifications
NPN
TO-92-3L
General Purpose
onsemi
VCEO
100V
Ic Max
800mA
Pd Max
625mW
hFE Gain
10000
Quick Reference
The MPSA29-D26Z is a NPN bipolar transistor in a TO-92-3L package by onsemi. This datasheet provides complete specifications including 100V breakdown voltage and 800mA continuous collector current. Download the MPSA29-D26Z datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-92-3L | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 800mA | Collector current |
| Pd | 625mW | Power dissipation |
| DC Current Gain | 10000 | hFE / Beta |
| Frequency | 125MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃@(Tj) | Operating temp |