3N100G-TN3-R MOSFET Datasheet & Specifications
N-Channel
TO-252
High-Voltage
UTC
Vds Max
1kV
Id Max
3A
Rds(on)
5.5ฮฉ@10V
Vgs(th)
5V
Quick Reference
The 3N100G-TN3-R is an N-Channel MOSFET in a TO-252 package, manufactured by UTC. It supports a drain-source breakdown voltage of 1kV and a continuous drain current of 3A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | UTC | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 1kV | Max breakdown voltage |
| Continuous Drain Current (Id) | 3A | Max current handling |
| Power Dissipation (Pd) | 50W | Max thermal limit |
| On-Resistance (Rds(on)) | 5.5ฮฉ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 5V | Voltage required to turn on |
| Gate Charge (Qg) | 15nC@10V | Switching energy |
| Input Capacitance (Ciss) | 530pF | Internal gate capacitance |
| Output Capacitance (Coss) | 60pF | Internal output capacitance |
| Operating Temp | -55โ~+150โ | Safe junction temperature range |