CMD3N120 MOSFET Datasheet & Specifications
N-Channel
TO-252
High-Voltage
Cmos
Vds Max
1.2kV
Id Max
3A
Rds(on)
5.7ฮฉ@10V
Vgs(th)
5V
Quick Reference
The CMD3N120 is an N-Channel MOSFET in a TO-252 package, manufactured by Cmos. It supports a drain-source breakdown voltage of 1.2kV and a continuous drain current of 3A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Cmos | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 1.2kV | Max breakdown voltage |
| Continuous Drain Current (Id) | 3A | Max current handling |
| Power Dissipation (Pd) | 100W | Max thermal limit |
| On-Resistance (Rds(on)) | 5.7ฮฉ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 5V | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | 850pF | Internal gate capacitance |
| Output Capacitance (Coss) | 55pF | Internal output capacitance |
| Operating Temp | -55โ~+150โ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| TPM12003NHK3 | N-Channel | TO-252 | 1.2kV | 3A | 9ฮฉ@10V | 5V | TECH PUBLIC ๐ PDF |
| 3N120 | N-Channel | TO-252 | 1.2kV | 3A | 9ฮฉ@10V | 5V | TECH PUBLIC ๐ PDF |