3DD4242DM-126 Datasheet & Equivalents
NPN
TO-126
High Power
Jilin Sino-Microelectronics
VCEO
400V
Ic Max
1.5A
Pd Max
20W
hFE Gain
22
Quick Reference
The 3DD4242DM-126 is a NPN bipolar junction transistor in a TO-126 package, manufactured by Jilin Sino-Microelectronics. It supports a breakdown voltage of 400V and continuous collector current of 1.5A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Jilin Sino-Microelectronics | Original Manufacturer |
| Package | TO-126 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 400V | Max breakdown voltage |
| Collector Current (Ic) | 1.5A | Max current handling |
| Power Dissipation (Pd) | 20W | Max thermal limit |
| DC Current Gain (hFE) | 22 | Base signal amplification ratio |
| Transition Frequency (fT) | 4MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 200mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 9V | Max emitter-base breakdown |
| Collector Cutoff Current | 5uA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| 13003 | NPN | TO-126 | 400V | 2A | 35 | 30W | OSEN 📄 PDF |
| 3DD4244DM | NPN | TO-126 | 400V | 3A | 20 | 60W | Jilin Sino-Mi... 📄 PDF |
| YFW13003 | NPN | TO-126 | 480V | 1.5A | 40 | 1.25W | YFW 📄 PDF |
| KSE13003-AS-HXY | NPN | TO-126 | 500V | 1.5A | 25 | 1.25W | HXY MOSFET 📄 PDF |
| ST13003-K-HXY | NPN | TO-126 | 500V | 1.5A | 25 | 1.25W | HXY MOSFET 📄 PDF |