KSE13003-AS-HXY Datasheet & Equivalents
NPN
TO-126
General Purpose
HXY MOSFET
VCEO
500V
Ic Max
1.5A
Pd Max
1.25W
hFE Gain
25
Quick Reference
The KSE13003-AS-HXY is a NPN bipolar junction transistor in a TO-126 package, manufactured by HXY MOSFET. It supports a breakdown voltage of 500V and continuous collector current of 1.5A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | TO-126 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 500V | Max breakdown voltage |
| Collector Current (Ic) | 1.5A | Max current handling |
| Power Dissipation (Pd) | 1.25W | Max thermal limit |
| DC Current Gain (hFE) | 25 | Base signal amplification ratio |
| Transition Frequency (fT) | 5MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 600mV@1A,0.2A | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 9V | Max emitter-base breakdown |
| Collector Cutoff Current | 1mA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| ST13003-K-HXY | NPN | TO-126 | 500V | 1.5A | 25 | 1.25W | HXY MOSFET 📄 PDF |