3DD13009AN Datasheet & Equivalents

NPN TO-3P High Power XCH
VCEO
400V
Ic Max
12A
Pd Max
120W
hFE Gain
30

Quick Reference

The 3DD13009AN is a NPN bipolar junction transistor in a TO-3P package, manufactured by XCH. It supports a breakdown voltage of 400V and continuous collector current of 12A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerXCHOriginal Manufacturer
PackageTO-3PPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)400VMax breakdown voltage
Collector Current (Ic)12AMax current handling
Power Dissipation (Pd)120WMax thermal limit
DC Current Gain (hFE)30Base signal amplification ratio
Transition Frequency (fT)4MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
D209L NPN TO-3P 400V 12A 40 130W
2SC3320 NPN TO-3P 400V 15A 10 80W
WGD4515 NPN TO-3P 400V 15A 50 120W
Wild Goose ๐Ÿ“„ PDF
2SC2751 NPN TO-3P 400V 15A 80 120W
2SC4110 NPN TO-3P 400V 25A 50 160W
BUF420A NPN TO-3P 450V 30A 50 200W
2SC3998 NPN TO-3P 800V 20A 40 200W
FJL6920 NPN TO-3P 800V 20A 8 200W
2SC3998 NPN TO-3P 800V 25A 4 250W
2SC5570 NPN TO-3P 800V 28A 8 220W