2SC5570 Datasheet & Equivalents
NPN
TO-3P
High Power
SPTECH
VCEO
800V
Ic Max
28A
Pd Max
220W
hFE Gain
8
Quick Reference
The 2SC5570 is a NPN bipolar junction transistor in a TO-3P package, manufactured by SPTECH. It supports a breakdown voltage of 800V and continuous collector current of 28A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SPTECH | Original Manufacturer |
| Package | TO-3P | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 800V | Max breakdown voltage |
| Collector Current (Ic) | 28A | Max current handling |
| Power Dissipation (Pd) | 220W | Max thermal limit |
| DC Current Gain (hFE) | 8 | Base signal amplification ratio |
| Transition Frequency (fT) | - | Max operating frequency |
| Saturation Voltage (VCEsat) | 5V | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 6V | Max emitter-base breakdown |
| Collector Cutoff Current | 10uA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||