3DD13009AN Datasheet & Equivalents

NPN TO-3P High Power Wuxi China Resources Huajing Microelectronics
VCEO
400V
Ic Max
12A
Pd Max
120W
hFE Gain
35

Quick Reference

The 3DD13009AN is a NPN bipolar junction transistor in a TO-3P package, manufactured by Wuxi China Resources Huajing Microelectronics. It supports a breakdown voltage of 400V and continuous collector current of 12A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerWuxi China Resources Huajing MicroelectronicsOriginal Manufacturer
PackageTO-3PPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)400VMax breakdown voltage
Collector Current (Ic)12AMax current handling
Power Dissipation (Pd)120WMax thermal limit
DC Current Gain (hFE)35Base signal amplification ratio
Transition Frequency (fT)4MHzMax operating frequency
Saturation Voltage (VCEsat)1VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)9VMax emitter-base breakdown
Collector Cutoff Current100uALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
D209L NPN TO-3P 400V 12A 40 130W
WGD4515 NPN TO-3P 400V 15A 50 120W
Wild Goose ๐Ÿ“„ PDF
2SC3320 NPN TO-3P 400V 15A 10 80W
2SC2751 NPN TO-3P 400V 15A 80 120W
2SC4110 NPN TO-3P 400V 25A 50 160W
BUF420A NPN TO-3P 450V 30A 50 200W
2SC3998 NPN TO-3P 800V 20A 40 200W
FJL6920 NPN TO-3P 800V 20A 8 200W
2SC3998 NPN TO-3P 800V 25A 4 250W
2SC5570 NPN TO-3P 800V 28A 8 220W