2SD844 Datasheet & Equivalents

NPN TO-3P High Power SPTECH
VCEO
50V
Ic Max
7A
Pd Max
60W
hFE Gain
240

Quick Reference

The 2SD844 is a NPN bipolar junction transistor in a TO-3P package, manufactured by SPTECH. It supports a breakdown voltage of 50V and continuous collector current of 7A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3PPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)50VMax breakdown voltage
Collector Current (Ic)7AMax current handling
Power Dissipation (Pd)60WMax thermal limit
DC Current Gain (hFE)240Base signal amplification ratio
Transition Frequency (fT)15MHzMax operating frequency
Saturation Voltage (VCEsat)400mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current10uALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SD717 NPN TO-3P 50V 10A 240 80W
2SC3300 NPN TO-3P 50V 15A 360 60W
TIP3055 NPN TO-3P 60V 15A 70 90W
TIP33C NPN TO-3P 100V 10A 100 80W
2SC4467 NPN TO-3P 120V 8A 180 80W
2SC5100 NPN TO-3P 120V 8A 180 75W
2SC3181 NPN TO-3P 120V 8A 160 80W
2SC5197 NPN TO-3P 120V 8A 160 80W
2SD718 NPN TO-3P 120V 8A 160 80W
OSD1047 NPN TO-3P 120V 10A 160 100W
OSC5198 NPN TO-3P 120V 11A 160 120W
TIP35C NPN TO-3P 120V 11A 160 125W