2SD2150 Datasheet & Equivalents

NPN SOT-89 General Purpose JSCJ
VCEO
20V
Ic Max
3A
Pd Max
500mW
hFE Gain
560

Quick Reference

The 2SD2150 is a NPN bipolar junction transistor in a SOT-89 package, manufactured by JSCJ. It supports a breakdown voltage of 20V and continuous collector current of 3A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSCJOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)20VMax breakdown voltage
Collector Current (Ic)3AMax current handling
Power Dissipation (Pd)500mWMax thermal limit
DC Current Gain (hFE)560Base signal amplification ratio
Transition Frequency (fT)290MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SD2098R NPN SOT-89 20V 5A 390 2W
2SD2098T100R-HXY NPN SOT-89 20V 5A 390 500mW
HXY MOSFET ๐Ÿ“„ PDF
PBSS4520X-HXY NPN SOT-89 20V 5A 390 500mW
HXY MOSFET ๐Ÿ“„ PDF
2SD2098T100R NPN SOT-89 20V 5A 120 1W
ZXTN19020DZTA NPN SOT-89 20V 7.5A 300 2.4W
2SD965 NPN SOT-89 22V 5A 1000 750mW
PBSS4330X NPN SOT-89 30V 3A 700 1.6W
Nexperia ๐Ÿ“„ PDF
135 NPN SOT-89 30V 3A 400 500mW
BD882-Y NPN SOT-89 30V 3A 400 500mW
D882Y-2AF NPN SOT-89 30V 3A 400 500mW
FUXINSEMI ๐Ÿ“„ PDF
2SD882 NPN SOT-89 30V 3A 400 10W
GOODWORK ๐Ÿ“„ PDF
D882 NPN SOT-89 30V 3A 400 500mW
YONGYUTAI ๐Ÿ“„ PDF
D882 NPN SOT-89 30V 3A 400 500mW
HT(Shenzhen J... ๐Ÿ“„ PDF
D882 NPN SOT-89 30V 3A 400 500mW
D882 NPN SOT-89 30V 3A 320 500mW
2SD882-P NPN SOT-89 30V 3A 230 500mW
2SD882 NPN SOT-89 30V 3A 200 500mW
D882(RANGE:200-400) NPN SOT-89 30V 3A 180 1.2W
2SD2150R NPN SOT-89 30V 3A 180 1.6W
Nexperia ๐Ÿ“„ PDF
PBSS4330X NPN SOT-89 30V 3A 160 500mW