2SD2098T100R-HXY Datasheet & Equivalents

NPN SOT-89 General Purpose HXY MOSFET
VCEO
20V
Ic Max
5A
Pd Max
500mW
hFE Gain
390

Quick Reference

The 2SD2098T100R-HXY is a NPN bipolar junction transistor in a SOT-89 package, manufactured by HXY MOSFET. It supports a breakdown voltage of 20V and continuous collector current of 5A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)20VMax breakdown voltage
Collector Current (Ic)5AMax current handling
Power Dissipation (Pd)500mWMax thermal limit
DC Current Gain (hFE)390Base signal amplification ratio
Transition Frequency (fT)150MHzMax operating frequency
Saturation Voltage (VCEsat)1VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current500nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SD2098R NPN SOT-89 20V 5A 390 2W
PBSS4520X-HXY NPN SOT-89 20V 5A 390 500mW
HXY MOSFET ๐Ÿ“„ PDF
2SD2098T100R NPN SOT-89 20V 5A 120 1W
ZXTN19020DZTA NPN SOT-89 20V 7.5A 300 2.4W
2SD965 NPN SOT-89 22V 5A 1000 750mW
2SC5569G-AB3-R NPN SOT-89 50V 7A 560 3.5W
2SC5569-TD-E NPN SOT-89 50V 7A 200 3.5W