2SC1815H Datasheet & Equivalents

NPN SOT-23 General Purpose LGE
VCEO
50V
Ic Max
150mA
Pd Max
400mW
hFE Gain
265

Quick Reference

The 2SC1815H is a NPN bipolar junction transistor in a SOT-23 package, manufactured by LGE. It supports a breakdown voltage of 50V and continuous collector current of 150mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerLGEOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)50VMax breakdown voltage
Collector Current (Ic)150mAMax current handling
Power Dissipation (Pd)400mWMax thermal limit
DC Current Gain (hFE)265Base signal amplification ratio
Transition Frequency (fT)80MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MMBTSC3875Y NPN SOT-23 50V 150mA 240 150mW
2SC2712-GR NPN SOT-23 50V 150mA 200 200mW
LXHF NPN SOT-23 50V 150mA 200 200mW
C1815(RANGE:200-400) NPN SOT-23 50V 150mA 200 200mW
C945(RANGE:200-400) NPN SOT-23 50V 150mA 200 200mW
ST(Semtech) ๐Ÿ“„ PDF
MMBTSC1815G(HF) NPN SOT-23 50V 150mA 200 320mW
TBC847B NPN SOT-23 50V 150mA 200 200mW
LM NPN SOT-23 50V 150mA 200 200mW
2SC1815 NPN SOT-23 50V 150mA 180 350mW
C1815 NPN SOT-23 50V 150mA 180 200mW
2DC2412R-7 NPN SOT-23 50V 150mA 390 150mW
HXY MOSFET ๐Ÿ“„ PDF
2SC4617G-R-AE3-R NPN SOT-23 50V 150mA 390 200mW
2DC2412R-7-HXY NPN SOT-23 50V 150mA 390 150mW
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2SC2412K NPN SOT-23 50V 150mA 400 200mW
H2SC2412KT146R NPN SOT-23 50V 150mA 400 200mW
2SC1815-MS NPN SOT-23 50V 150mA 400 150mW
KTC3875S-G NPN SOT-23 50V 150mA 130 200mW
MMBTSC3875G NPN SOT-23 50V 150mA 400 200mW
luJing
2SC1815 NPN SOT-23 50V 150mA 400 200mW
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2SC1815 NPN SOT-23 50V 150mA 400 200mW
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