2SB806 Transistor Datasheet & Specifications

PNP BJT | Shikues

PNPSOT-89General Purpose
VCEO
120V
Ic Max
700mA
Pd Max
2W
Gain
45

Quick Reference

The 2SB806 is a PNP bipolar transistor in a SOT-89 package. This datasheet provides complete specifications including 120V breakdown voltage and 700mA continuous collector current. Download the 2SB806 datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerShikuesOriginal Manufacturer
PackageSOT-89Physical mounting
VCEO120VBreakdown voltage
IC Max700mACollector current
Pd Max2WPower dissipation
Gain45DC current gain
Frequency75MHzTransition speed
VCEsat400mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
2DA1201Y-7PNPSOT-89120V800mA1.5W
FCX593TAPNPSOT-89100V1A2W
2SA1201YPNPSOT-89120V800mA500mW
2SA1416S-TD-EPNPSOT-89100V1A500mW
PXT5401PNPSOT-89150V500mA500mW
FCX555TAPNPSOT-89150V700mA1.5W
CXT5401PNPSOT-89150V500mA500mW
2SA1417-SPNPSOT-89100V2A550mW
2SA1661-JSMPNPSOT-89120V800mA500mW
2SA1201-JSMPNPSOT-89120V800mA500mW