2SA1416S-TD-E Transistor Datasheet & Specifications

PNP BJT | onsemi

PNPSOT-89General Purpose
VCEO
100V
Ic Max
1A
Pd Max
500mW
Gain
100

Quick Reference

The 2SA1416S-TD-E is a PNP bipolar transistor in a SOT-89 package. This datasheet provides complete specifications including 100V breakdown voltage and 1A continuous collector current. Download the 2SA1416S-TD-E datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-89Physical mounting
VCEO100VBreakdown voltage
IC Max1ACollector current
Pd Max500mWPower dissipation
Gain100DC current gain
Frequency120MHzTransition speed
VCEsat100mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
2DA1201Y-7PNPSOT-89120V800mA1.5W
FCX593TAPNPSOT-89100V1A2W
2SA1201YPNPSOT-89120V800mA500mW
BCX53-16PNPSOT-89-80V-
BCX53-16PNPSOT-89-80V-
BCX53 AH HDPNPSOT-8980V1A500mW
H2SB1260T100RPNPSOT-8980V1A500mW
2SB1260T100QPNPSOT-8980V1A1W
BCX53-16PNPSOT-89-80V-
BCX53TAPNPSOT-8980V1A1.5W