H2SB1260T100R Transistor Datasheet & Specifications

PNP BJT | HXY MOSFET

PNPSOT-89General Purpose
VCEO
80V
Ic Max
1A
Pd Max
500mW
Gain
390

Quick Reference

The H2SB1260T100R is a PNP bipolar transistor in a SOT-89 package. This datasheet provides complete specifications including 80V breakdown voltage and 1A continuous collector current. Download the H2SB1260T100R datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-89Physical mounting
VCEO80VBreakdown voltage
IC Max1ACollector current
Pd Max500mWPower dissipation
Gain390DC current gain
Frequency100MHzTransition speed
VCEsat400mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
ZXTP2012ZTAPNPSOT-8960V4.3A1.5W
2STF2360PNPSOT-8960V3A1.4W
FCX593TAPNPSOT-89100V1A2W
BCX52PNPSOT-8960V1A1W
BCX53-16PNPSOT-89-80V-
FCX591TAPNPSOT-8960V1A1.5W
BCX53-16PNPSOT-89-80V-
BCX53-16PNPSOT-89-80V-
BCX53 AH HDPNPSOT-8980V1A500mW