2SA1386 Transistor Datasheet & Specifications

PNP BJT | SPTECH

PNPTO-3PNGeneral Purpose
VCEO
160V
Ic Max
15A
Pd Max
130W
Gain
180

Quick Reference

The 2SA1386 is a PNP bipolar transistor in a TO-3PN package. This datasheet provides complete specifications including 160V breakdown voltage and 15A continuous collector current. Download the 2SA1386 datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3PNPhysical mounting
VCEO160VBreakdown voltage
IC Max15ACollector current
Pd Max130WPower dissipation
Gain180DC current gain
Frequency40MHzTransition speed
VCEsat2VSaturation voltage
Vebo5VEmitter-Base voltage
Temp-Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
2SA2151PNPTO-3PN200V15A160W
2SB688PNPTO-3PN120V8A80W
2SB817PNPTO-3PN140V12A100W
2SA1106PNPTO-3PN140V10A100W
2SA1141PNPTO-3PN115V10A100W
2SA1186PNPTO-3PN150V10A100W
2SA1232PNPTO-3PN130V10A100W
2SA1492PNPTO-3PN180V15A130W
2SA1941PNPTO-3PN140V10A100W