2SA1106 Transistor Datasheet & Specifications

PNP BJT | SPTECH

PNPTO-3PNGeneral Purpose
VCEO
140V
Ic Max
10A
Pd Max
100W
Gain
30

Quick Reference

The 2SA1106 is a PNP bipolar transistor in a TO-3PN package. This datasheet provides complete specifications including 140V breakdown voltage and 10A continuous collector current. Download the 2SA1106 datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3PNPhysical mounting
VCEO140VBreakdown voltage
IC Max10ACollector current
Pd Max100WPower dissipation
Gain30DC current gain
Frequency20MHzTransition speed
VCEsat2VSaturation voltage
Vebo6VEmitter-Base voltage
Temp-Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
2SA1386PNPTO-3PN160V15A130W
2SB688PNPTO-3PN120V8A80W
2SB817PNPTO-3PN140V12A100W
2SA1141PNPTO-3PN115V10A100W
2SA1186PNPTO-3PN150V10A100W
2SA1232PNPTO-3PN130V10A100W
TIP36CPNPTO-3PN100V25A125W
2SA1492PNPTO-3PN180V15A130W
2SA1941PNPTO-3PN140V10A100W