2SA1313 Datasheet & Equivalents

PNP SOT-23 General Purpose JSCJ
VCEO
50V
Ic Max
500mA
Pd Max
200mW
hFE Gain
25

Quick Reference

The 2SA1313 is a PNP bipolar junction transistor in a SOT-23 package, manufactured by JSCJ. It supports a breakdown voltage of 50V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSCJOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)50VMax breakdown voltage
Collector Current (Ic)500mAMax current handling
Power Dissipation (Pd)200mWMax thermal limit
DC Current Gain (hFE)25Base signal amplification ratio
Transition Frequency (fT)200MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2PB710ASL PNP SOT-23 50V 500mA 170 250mW
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215 PNP SOT-23 50V 1A 500 800mW
2SB1691WL-TL-E PNP SOT-23 60V 500mA 100 225mW
MMBTA55(RANGE:100-400) PNP SOT-23 60V 500mA 100 300mW
MMBTA55-JSM PNP SOT-23 60V 500mA 100 225mW
MMBTA55LT1G PNP SOT-23 60V 500mA 100 225mW
MMBTA55_R1_00001 PNP SOT-23 60V 500mA 100 225mW
MMBTA55 PNP SOT-23 60V 500mA 100 225mW
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MMBTA55 PNP SOT-23 60V 500mA 400 225mW
MMBTA55 PNP SOT-23 60V 500mA 10000 250mW
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BCV46 PNP SOT-23 60V 600mA 75 350mW
215 PNP SOT-23 60V 600mA 75 330mW
Infineon ๐Ÿ“„ PDF
MMBT2907ALT1G PNP SOT-23 60V 600mA 75 225mW
MMBT2907ALT1HTSA1 PNP SOT-23 60V 600mA 75 250mW
SMMBT2907ALT1G PNP SOT-23 60V 600mA 100 300mW
MMBT2907A PNP SOT-23 60V 600mA 100 350mW
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AMMBT2907A-HF PNP SOT-23 60V 600mA 100 250mW
KBT2907AC PNP SOT-23 60V 600mA 100 250mW
MMBT2907A 2F PNP SOT-23 60V 600mA 100 310mW
MMBT2907A(RANGE:100-300) PNP SOT-23 60V 600mA 100 350mW