MMBTA55LT1G Datasheet & Equivalents

PNP SOT-23 General Purpose onsemi
VCEO
60V
Ic Max
500mA
Pd Max
225mW
hFE Gain
100

Quick Reference

The MMBTA55LT1G is a PNP bipolar junction transistor in a SOT-23 package, manufactured by onsemi. It supports a breakdown voltage of 60V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)60VMax breakdown voltage
Collector Current (Ic)500mAMax current handling
Power Dissipation (Pd)225mWMax thermal limit
DC Current Gain (hFE)100Base signal amplification ratio
Transition Frequency (fT)50MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

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