2SA1163-GR,LF Datasheet & Equivalents

PNP SOT-23 General Purpose TOSHIBA
VCEO
120V
Ic Max
100mA
Pd Max
200mW
hFE Gain
700

Quick Reference

The 2SA1163-GR,LF is a PNP bipolar junction transistor in a SOT-23 package, manufactured by TOSHIBA. It supports a breakdown voltage of 120V and continuous collector current of 100mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerTOSHIBAOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)120VMax breakdown voltage
Collector Current (Ic)100mAMax current handling
Power Dissipation (Pd)200mWMax thermal limit
DC Current Gain (hFE)700Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)300mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55โ„ƒ~+125โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SA1721-O(TE85L PNP SOT-23 300V 100mA 30 150mW
F) PNP SOT-23 300V 200mA 200 300mW
MMBTA92-6AF PNP SOT-23 300V 200mA 200 300mW
MMBTA92-MS PNP SOT-23 300V 200mA 200 300mW
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MMBTA92 PNP SOT-23 300V 200mA 200 300mW
MMBTA92 PNP SOT-23 300V 200mA 200 300mW
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MMBTA92 PNP SOT-23 300V 200mA 100 500mW
FMMT597TA PNP SOT-23 300V 200mA 100 300mW
MMBTA92 PNP SOT-23 300V 200mA 100 300mW
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MMBTA92 PNP SOT-23 300V 200mA 100 300mW
MMBTA92 PNP SOT-23 300V 200mA 60 300mW
MMBTA92(RANGE:100-200) PNP SOT-23 300V 200mA 40 350mW
FMMTA92QTA PNP SOT-23 300V 200mA 40 310mW
FMMTA92TA PNP SOT-23 300V 200mA 25 360mW
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