2N7002G-AE2-R MOSFET Datasheet & Specifications
N-Channel
SOT-23-3
Logic-Level
UTC
Vds Max
60V
Id Max
300mA
Rds(on)
7.5Ω
Vgs(th)
2.1V
Quick Reference
The 2N7002G-AE2-R is an N-Channel MOSFET in a SOT-23-3 package, manufactured by UTC. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 300mA. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | UTC | Original Manufacturer |
| Package | SOT-23-3 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 300mA | Max current handling |
| Power Dissipation (Pd) | 200mW | Max thermal limit |
| On-Resistance (Rds(on)) | 7.5Ω | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.1V | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | 50pF | Internal gate capacitance |
| Output Capacitance (Coss) | 11pF | Internal output capacitance |
| Operating Temp | -40℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| DO5N06AA | N-Channel | SOT-23-3 | 60V | 5A | 35mΩ@10V | 1.57V | DOINGTER 📄 PDF |
| SQ2362CES-T1_GE3 | N-Channel | SOT-23-3 | 60V | 4.3A | 57mΩ@10V 62mΩ@4.5V |
2V | VISHAY 📄 PDF |
| DO2310DA | N-Channel | SOT-23-3 | 60V | 3.2A | 100mΩ@10V | 2.5V | DOINGTER 📄 PDF |
| DO5N10BA | N-Channel | SOT-23-3 | 100V | 5A | 130mΩ@4.5V | 2.5V | DOINGTER 📄 PDF |