2N6052 Datasheet & Equivalents

PNP TO-3 High Power SPTECH
VCEO
100V
Ic Max
12A
Pd Max
150W
hFE Gain
18000
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Quick Reference

The 2N6052 is a PNP bipolar junction transistor in a TO-3 package, manufactured by SPTECH. It supports a breakdown voltage of 100V and continuous collector current of 12A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)100VMax breakdown voltage
Collector Current (Ic)12AMax current handling
Power Dissipation (Pd)150WMax thermal limit
DC Current Gain (hFE)18000Base signal amplification ratio
Transition Frequency (fT)-Max operating frequency
Saturation Voltage (VCEsat)3VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-65℃~+150℃Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
BD318 PNP TO-3 100V 16A 25 200W
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MJ4502G PNP TO-3 100V 30A 25 200W
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MJ15016 PNP TO-3 120V 15A 70 180W
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MJ15004G-JSM PNP TO-3 140V 20A 150 250W
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MJ15022 PNP TO-3 200V 16A 60 250W
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MJ15023 PNP TO-3 200V 16A 60 250W
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MJ15023G-JSM PNP TO-3 200V 16A 60 250W
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MJ15025 PNP TO-3 250V 16A 60 250W
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MJ15025-JSM PNP TO-3 250V 16A 60 250W
JSMSEMI 📄 PDF
MJ21193G PNP TO-3 250V 16A 25 250W
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MJ15025G PNP TO-3 250V 16A 15 250W
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PNP Bipolar Transistors High-Power PNP BJTs