BD318 Datasheet & Equivalents

PNP TO-3 High Power SPTECH
VCEO
100V
Ic Max
16A
Pd Max
200W
hFE Gain
25

Quick Reference

The BD318 is a PNP bipolar junction transistor in a TO-3 package, manufactured by SPTECH. It supports a breakdown voltage of 100V and continuous collector current of 16A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)100VMax breakdown voltage
Collector Current (Ic)16AMax current handling
Power Dissipation (Pd)200WMax thermal limit
DC Current Gain (hFE)25Base signal amplification ratio
Transition Frequency (fT)1MHzMax operating frequency
Saturation Voltage (VCEsat)1VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)7VMax emitter-base breakdown
Collector Cutoff Current1mALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MJ4502G PNP TO-3 100V 30A 25 200W
MJ15004G-JSM PNP TO-3 140V 20A 150 250W
MJ15022 PNP TO-3 200V 16A 60 250W
MJ15023 PNP TO-3 200V 16A 60 250W
MJ15023G-JSM PNP TO-3 200V 16A 60 250W
MJ21193G PNP TO-3 250V 16A 25 250W
MJ15025G PNP TO-3 250V 16A 15 250W
MJ15025 PNP TO-3 250V 16A 60 250W
MJ15025-JSM PNP TO-3 250V 16A 60 250W