2N5551 Transistor Datasheet & Specifications

NPN BJT | DIOTEC

NPNTO-92General Purpose
VCEO
160V
Ic Max
600mA
Pd Max
625mW
Gain
-

Quick Reference

The 2N5551 is a NPN bipolar transistor in a TO-92 package. This datasheet provides complete specifications including 160V breakdown voltage and 600mA continuous collector current. Download the 2N5551 datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIOTECOriginal Manufacturer
PackageTO-92Physical mounting
VCEO160VBreakdown voltage
IC Max600mACollector current
Pd Max625mWPower dissipation
Gain-DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo300MHzEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
ZTX455NPNTO-92140V1A1W
ZTX694BNPNTO-92120V500mA1.5W
KSP8099TF-HXYNPNTO-92160V600mA625mW
NTE297-HXYNPNTO-92160V600mA625mW
2N5551NPNTO-92160V600mA625mW
2SC2240NPNTO-92120V100mA300mW
2N5551NPNTO-92160V600mA625mW
2SC2383-YNPNTO-92160V1A700mW
2SD1857L-Q-T92-BNPNTO-92120V2A625mW
ZTX605NPNTO-92120V1A1W