2N5401YBU Datasheet & Equivalents
PNP
TO-92
General Purpose
onsemi
VCEO
150V
Ic Max
600mA
Pd Max
625mW
hFE Gain
120
Quick Reference
The 2N5401YBU is a PNP bipolar junction transistor in a TO-92 package, manufactured by onsemi. It supports a breakdown voltage of 150V and continuous collector current of 600mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-92 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 150V | Max breakdown voltage |
| Collector Current (Ic) | 600mA | Max current handling |
| Power Dissipation (Pd) | 625mW | Max thermal limit |
| DC Current Gain (hFE) | 120 | Base signal amplification ratio |
| Transition Frequency (fT) | 400MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 200mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 50uA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| 2N5401YTA | PNP | TO-92 | 150V | 600mA | 120 | 625mW | onsemi 📄 PDF |
| 2N5401 | PNP | TO-92 | 150V | 600mA | 150 | 625mW | JSMSEMI 📄 PDF |
| 2N5401 | PNP | TO-92 | 150V | 600mA | 60 | 625mW | ST(Semtech) 📄 PDF |
| 2SA1013-Y | PNP | TO-92 | 160V | 1A | 160 | 900mW | BLUE ROCKET 📄 PDF |
| ZTX957 | PNP | TO-92 | 300V | 1A | 100 | 1.2W | DIODES 📄 PDF |