2N5401 Datasheet & Equivalents
PNP
TO-92
General Purpose
JSMSEMI
VCEO
150V
Ic Max
600mA
Pd Max
625mW
hFE Gain
150
Quick Reference
The 2N5401 is a PNP bipolar junction transistor in a TO-92 package, manufactured by JSMSEMI. It supports a breakdown voltage of 150V and continuous collector current of 600mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSMSEMI | Original Manufacturer |
| Package | TO-92 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 150V | Max breakdown voltage |
| Collector Current (Ic) | 600mA | Max current handling |
| Power Dissipation (Pd) | 625mW | Max thermal limit |
| DC Current Gain (hFE) | 150 | Base signal amplification ratio |
| Transition Frequency (fT) | 300MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 500mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 50nA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |