2N5401S Transistor Datasheet & Specifications

PNP BJT | YONGYUTAI

PNPSOT-23General Purpose
VCEO
150V
Ic Max
600mA
Pd Max
300mW
Gain
400

Quick Reference

The 2N5401S is a PNP bipolar transistor in a SOT-23 package. This datasheet provides complete specifications including 150V breakdown voltage and 600mA continuous collector current. Download the 2N5401S datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerYONGYUTAIOriginal Manufacturer
PackageSOT-23Physical mounting
VCEO150VBreakdown voltage
IC Max600mACollector current
Pd Max300mWPower dissipation
Gain400DC current gain
Frequency-Transition speed
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMBT5401PNPSOT-23150V600mA225mW
MMBT5401PNPSOT-23150V600mA225mW
NSVMMBT5401LT3GPNPSOT-23150V500mA300mW
MMBT5401-7-FPNPSOT-23150V600mA310mW
MMBT5401(RANGE:200-300)PNPSOT-23150V600mA300mW
MMBT5401-TPPNPSOT-23150V600mA300mW
MMBT5401LT1GPNPSOT-23150V500mA300mW
MMBT5401PNPSOT-23150V600mA225mW
MMBT5401PNPSOT-23150V600mA225mW
MMBT5401SPNPSOT-23150V600mA300mW