MMBT5401LT1G Transistor Datasheet & Specifications

PNP BJT | onsemi

PNPSOT-23General Purpose
VCEO
150V
Ic Max
500mA
Pd Max
300mW
Gain
60

Quick Reference

The MMBT5401LT1G is a PNP bipolar transistor in a SOT-23 package. This datasheet provides complete specifications including 150V breakdown voltage and 500mA continuous collector current. Download the MMBT5401LT1G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
VCEO150VBreakdown voltage
IC Max500mACollector current
Pd Max300mWPower dissipation
Gain60DC current gain
Frequency300MHzTransition speed
VCEsat200mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMBT5401PNPSOT-23150V600mA225mW
MMBT5401PNPSOT-23150V600mA225mW
NSVMMBT5401LT3GPNPSOT-23150V500mA300mW
MMBT5401-7-FPNPSOT-23150V600mA310mW
MMBT5401(RANGE:200-300)PNPSOT-23150V600mA300mW
MMBT5401-TPPNPSOT-23150V600mA300mW
MMBT5401PNPSOT-23150V600mA225mW
MMBT5401PNPSOT-23150V600mA225mW
MMBT5401SPNPSOT-23150V600mA300mW