2DD2652-7 Datasheet & Equivalents

NPN SOT-323 General Purpose DIODES
VCEO
12V
Ic Max
1.5A
Pd Max
500mW
hFE Gain
270

Quick Reference

The 2DD2652-7 is a NPN bipolar junction transistor in a SOT-323 package, manufactured by DIODES. It supports a breakdown voltage of 12V and continuous collector current of 1.5A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-323Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)12VMax breakdown voltage
Collector Current (Ic)1.5AMax current handling
Power Dissipation (Pd)500mWMax thermal limit
DC Current Gain (hFE)270Base signal amplification ratio
Transition Frequency (fT)260MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
ZUMT617TA NPN SOT-323 15V 1.5A 200 500mW
SS8050(RANGE:200-350) NPN SOT-323 25V 1.5A 200 250mW
SS8050W NPN SOT-323 25V 1.5A 400 200mW
SS8050W NPN SOT-323 25V 1.5A 400 250mW
HXY MOSFET ๐Ÿ“„ PDF
SS8050W NPN SOT-323 25V 1.5A 120 200mW
GOODWORK ๐Ÿ“„ PDF
SS8050W NPN SOT-323 25V 1.5A 120 200mW
SS8050W NPN SOT-323 25V 1.5A 120 250mW