SS8050W Datasheet & Equivalents
NPN
SOT-323
General Purpose
HXY MOSFET
VCEO
25V
Ic Max
1.5A
Pd Max
250mW
hFE Gain
400
Quick Reference
The SS8050W is a NPN bipolar junction transistor in a SOT-323 package, manufactured by HXY MOSFET. It supports a breakdown voltage of 25V and continuous collector current of 1.5A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | SOT-323 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 25V | Max breakdown voltage |
| Collector Current (Ic) | 1.5A | Max current handling |
| Power Dissipation (Pd) | 250mW | Max thermal limit |
| DC Current Gain (hFE) | 400 | Base signal amplification ratio |
| Transition Frequency (fT) | 100MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SS8050(RANGE:200-350) | NPN | SOT-323 | 25V | 1.5A | 200 | 250mW | JSCJ 📄 PDF |