2DB1182Q-13 Transistor Datasheet & Specifications
PNPTO-252General Purpose
VCEO
32V
Ic Max
2A
Pd Max
1.2W
Gain
120
Quick Reference
The 2DB1182Q-13 is a PNP bipolar transistor in a TO-252 package. This datasheet provides complete specifications including 32V breakdown voltage and 2A continuous collector current. Download the 2DB1182Q-13 datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| VCEO | 32V | Breakdown voltage |
| IC Max | 2A | Collector current |
| Pd Max | 1.2W | Power dissipation |
| Gain | 120 | DC current gain |
| Frequency | - | Transition speed |
| VCEsat | - | Saturation voltage |
| Vebo | 110MHz | Emitter-Base voltage |
| Temp | -55℃~+150℃ | Operating temp |