2SB772 Transistor Datasheet & Specifications

PNP BJT | MSKSEMI

PNPTO-252-2General Purpose
VCEO
-
Ic Max
30V
Pd Max
3A
Gain
-55โ„ƒ~+150โ„ƒ

Quick Reference

The 2SB772 is a PNP bipolar transistor in a TO-252-2 package. This datasheet provides complete specifications including - breakdown voltage and 30V continuous collector current. Download the 2SB772 datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMSKSEMIOriginal Manufacturer
PackageTO-252-2Physical mounting
VCEO-Breakdown voltage
IC Max30VCollector current
Pd Max3APower dissipation
Gain-55โ„ƒ~+150โ„ƒDC current gain
Frequency320Transition speed
VCEsat80MHzSaturation voltage
Vebo1uAEmitter-Base voltage
Temp1.25WOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd