2DB1182Q-13 Datasheet & Equivalents

PNP TO-252 (DPAK) General Purpose DIODES
VCEO
32V
Ic Max
2A
Pd Max
1.2W
hFE Gain
120

Quick Reference

The 2DB1182Q-13 is a PNP bipolar junction transistor in a TO-252 (DPAK) package, manufactured by DIODES. It supports a breakdown voltage of 32V and continuous collector current of 2A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageTO-252 (DPAK)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)32VMax breakdown voltage
Collector Current (Ic)2AMax current handling
Power Dissipation (Pd)1.2WMax thermal limit
DC Current Gain (hFE)120Base signal amplification ratio
Transition Frequency (fT)110MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
ZXT790AKTC PNP TO-252 (DPAK) 40V 3A 200 3W
2SA1012B(RANGE:120-270) PNP TO-252 (DPAK) 50V 2A 120 1.25W
2SB1201S-TL-E PNP TO-252 (DPAK) 50V 2A 100 800mW
NJD1718T4G PNP TO-252 (DPAK) 50V 2A 70 1.68W
2DB1184Q-13 PNP TO-252 (DPAK) 50V 3A 120 1.2W
2SB1184(RANGE:120-270) PNP TO-252 (DPAK) 50V 3A 82 1W
2SAR573D3TL1 PNP TO-252 (DPAK) 50V 3A 180 10W
2SB1184 PNP TO-252 (DPAK) 50V 3A 390 1W
2SA1012(RANGE:120-240) PNP TO-252 (DPAK) 50V 5A 120 1.25W
KTA1040D-Y-RTF/P PNP TO-252 (DPAK) 60V 3A 100 1W
2SA1952 PNP TO-252 (DPAK) 60V 5A 120 1W
STD2805T4 PNP TO-252 (DPAK) 60V 5A 85 15W
2SA1952TLQ PNP TO-252 (DPAK) 60V 5A 270 10W
KTA1385D-Y-RTF/P PNP TO-252 (DPAK) 60V 5A 400 15W